IS42S32200E-7TLI ISSI, Integrated Silicon Solution Inc, IS42S32200E-7TLI Datasheet - Page 34

• Manufacturer Part Number: IS42S32200E-7TLI
• Description: IC SDRAM 64MBIT 143MHZ 86TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: SDRAMr

Specifications of IS42S32200E-7TLI

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 64M (2Mx32)
• Speed: 143MHz
• Interface: Parallel
• Voltage - Supply: 3.15 V ~ 3.45 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 86-TSOPII
• Organization: 2Mx32
• Density: 64Mb
• Address Bus: 13b
• Access Time (max): 8/5.5ns
• Maximum Clock Rate: 143MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 140mA
• Pin Count: 86
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Data Bus Width: 32 bit
• Maximum Clock Frequency: 143 MHz
• Access Time: 5.5 ns
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 3 V
• Maximum Operating Current: 140 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 706-1082; IS42S32200E-7TLI

IS42S32200E
DC ELECTRICAL CHARACTERISTICS
Notes:
1. These are the values at the minimum cycle time. Since the currents are transient, these values decrease as the cycle time
2. Icc
34
Symbol
I
I
V
V
I
I
I
I
I
I
I
I
OL
IL
CC1
CC2P
CC2PS
CC3P
CC3PS
CC4
CC5
CC6
O H
OL
increases. Also note that a bypass capacitor of at least 0.01 µF should be inserted between V
chip to suppress power supply voltage noise (voltage drops) due to these transient currents.
1
and Icc
Parameter
Input Leakage Current
Output Leakage Current
Output High Voltage Level
Output Low Voltage Level
Operating Current
Precharge Standby Current
(In Power-Down Mode)
Active Standby Current
(In Power-Down Mode)
Operating Current
(In Burst Mode)
Auto-Refresh Current
Self-Refresh Current
4
depend on the output load. The maximum values for Icc
(1)
(1,2)
Test Condition
0V V
the tested pin at 0V
Output is disabled, 0V V
I
I
One Bank Operation,
Burst Length=1
t
I
CKE V
CKE V
t
I
BL = 4; 4 banks activated
t
t
CKE 0.2V
OUT
OUT
RC
OUT
CK
OUT
RC
CLK
= t
= t
= 0mA
= 0mA
= t
= –2 mA
= +2 mA
t
RC
IN
CK
RC
CLK
(min.)
IL
IL
(
(
V
(
(
MIN
MIN
(
MIN
MAX
MAX
DD
Integrated Silicon Solution, Inc. — www.issi.com —
)
)
(Recommended Operation Conditions unless otherwise noted.)
)
, with pins other than
)
)
OUT
CAS latency = 3
CAS latency = 3
CAS latency = 3
V
DD
t
t
t
t
1
CK
CK
CK
CK
and Icc
=
=
= 15ns
= 10ns
4
are obtained with the output open state.
Com.
Com.
Com.
Com.
Com.
Com.
Com.
Com.
Com.
Com.
Com.
Com.
Com.
Ind.
Ind.
Ind.
Ind.
Ind.
Ind.
Ind.
Speed
-5
-6
-7
-7
—
—
—
—
—
—
—
—
-5
-6
-7
-7
-5
-6
-7
-7
—
DD
and GND for each memory
Min.
2.4
–5
–5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1-800-379-4774
Max.
130
145
180
130
100
110
150
150
130
150
0.4
—
95
85
5
5
2
4
1
3
7
7
5
5
1
Rev. 00D
06/02/08
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
µA
µA
V
V