MT46H16M16LFBF-6 IT:A TR Micron Technology Inc, MT46H16M16LFBF-6 IT:A TR Datasheet - Page 42

• Manufacturer Part Number: MT46H16M16LFBF-6 IT:A TR
• Description: IC DDR SDRAM 256MBIT 60VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT46H16M16LFBF-6 IT:A TR

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 256M (16Mx16)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 60-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1278-2

Figure 27:
PDF: 09005aef82091978 / Source: 09005aef8209195b
MT46H16M16LF__2.fm - Rev. H 6/08 EN
Command
Address
t
t
t
DQSS (NOM)
DQSS (MIN)
DQSS (MAX)
DQS
DQS
DQS
CK#
DM
DM
DM
DQ
DQ
DQ
CK
WRITE-to-READ – Interrupting
Bank a,
WRITE
Notes:
Col b
T0
t
t
t
DQSS
DQSS
DQSS
1. D
2. An interrupted burst of 4 is shown; two data elements are written.
3.
4. A10 is LOW with the WRITE command (auto precharge is disabled).
5. DQS is required at T2 and T2n (nominal case) to register DM.
6. If the burst of 8 was used, DM and DQS would be required at T3 and T3n because the READ
D
t
command would not mask these two data elements.
b
WTR is referenced from the first positive CK edge after the last data-in pair.
IN
IN
NOP
D
T1
b
b = data-in for column b; D
IN
b+1
D
D
b
IN
IN
T1n
b+1
D
IN
b+1
D
IN
NOP
T2
t
WTR
T2n
42
Bank a,
READ
Col n
T3
OUT
n = data-out for column n.
Micron Technology, Inc., reserves the right to change products or specifications without notice.
256Mb: x16, x32 Mobile DDR SDRAM
NOP
T4
Transitioning data
CL = 3
CL = 3
CL = 3
T5
NOP
©2005 Micron Technology, Inc. All rights reserved.
T5n
D
D
D
OUT
n
OUT
n
OUT
n
T6
Don’t Care
NOP
Operations
D
n+1
D
n+1
D
OUT
n+1
OUT
T6n
OUT