MX0912B251Y TRAY NXP Semiconductors, MX0912B251Y TRAY Datasheet - Page 11
MX0912B251Y TRAY
Manufacturer Part Number
MX0912B251Y TRAY
Description
Transistors Bipolar - BJT BULKTR TNS-MICL
Manufacturer
NXP Semiconductors
Datasheet
1.MX0912B251Y_TRAY.pdf
(12 pages)
Specifications of MX0912B251Y TRAY
Product Category
Transistors Bipolar - BJT
Rohs
yes
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
65 V
Collector- Emitter Voltage Vceo Max
20 V
Emitter- Base Voltage Vebo
3 V
Maximum Dc Collector Current
15 A
Gain Bandwidth Product Ft
1.215 GHz
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-439A
Maximum Power Dissipation
690000 mW
Factory Pack Quantity
4
Part # Aliases
MX0912B251Y,114
Philips Semiconductors
Product specification
NPN microwave power transistor
MX0912B251Y
NOTES
1997 Feb 19
11
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