2PA1774R /T3 NXP Semiconductors, 2PA1774R /T3 Datasheet - Page 7

• Manufacturer Part Number: 2PA1774R /T3
• Description: Transistors Bipolar - BJT TRANS GP TAPE-11
• Manufacturer: NXP Semiconductors

Specifications of 2PA1774R /T3

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 60 V
• Collector- Emitter Voltage Vceo Max: 50 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: 6 V
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 180 at 1 mA at 6 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-416
• Continuous Collector Current: 0.15 A
• Maximum Power Dissipation: 150 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 10000
• Part # Aliases: 2PA1774R,135

NXP Semiconductors
12. Contents
1
1.1
1.2
1.3
2
3
4
5
6
7
8
9
10
10.1
10.2
10.3
10.4
11
12
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
Ordering information . . . . . . . . . . . . . . . . . . . . . 1
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 2
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 4
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 5
Legal information. . . . . . . . . . . . . . . . . . . . . . . . 6
Contact information. . . . . . . . . . . . . . . . . . . . . . 6
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
General description . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 6
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [e-mail]
PNP general-purpose transistor
Date of release: 17 November 2009
Document identifier: 2PA1774_5
2PA1774
All rights reserved.