BC849BW /T3 NXP Semiconductors, BC849BW /T3 Datasheet - Page 4

• Manufacturer Part Number: BC849BW /T3
• Description: Transistors Bipolar - BJT TRANS LOW NOISE TAPE-11
• Manufacturer: NXP Semiconductors

Specifications of BC849BW /T3

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 30 V
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.1 A
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 200 at 2 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-323
• Maximum Power Dissipation: 200 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 10000
• Part # Aliases: BC849BW,135

NXP Semiconductors
1999 Apr 12
handbook, full pagewidth
handbook, full pagewidth
NPN general purpose transistors
BC849BW; BC850BW.
BC849CW; BC850CW.
h FE
h FE
300
200
100
600
400
200
0
0
10
10
−2
−2
10
10
−1
−1
Fig.2 DC current gain; typical values.
Fig.3 DC current gain; typical values.
1
1
4
10
10
V CE = 5 V
V CE = 5 V
BC849W; BC850W
10
10
2
2
I C (mA)
I C (mA)
Product data sheet
MBH724
MBH725
10
10
3
3