PBSS3540E T/R NXP Semiconductors, PBSS3540E T/R Datasheet - Page 9

• Manufacturer Part Number: PBSS3540E T/R
• Description: Transistors Bipolar - BJT LOW VCESAT (BLISS) TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PBSS3540E T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 40 V
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: 6 V
• Gain Bandwidth Product Ft: 300 MHz
• Dc Collector/base Gain Hfe Min: 200 at 10 mA at 2 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SC-75
• Continuous Collector Current: 0.5 A
• Maximum Power Dissipation: 250 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: PBSS3540E,115

NXP Semiconductors
11. Revision history
Table 9.
PBSS3540E_2
Product data sheet
Document ID
PBSS3540E_2
Modifications:
PBSS3540E_1
Revision history
Release date
20091211
20050503
•
•
•
This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
Figure 4 “Base-emitter voltage as a function of collector current; typical
Figure 12 “Reflow soldering
Rev. 02 — 11 December 2009
Data sheet status
Product data sheet
Product data sheet
footprint”: updated
40 V, 500 mA PNP low V
Change notice
-
-
PBSS3540E
Supersedes
PBSS3540E_1
-
CEsat
© NXP B.V. 2009. All rights reserved.
values”: updated
(BISS) transistor
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