PBSS5160V T/R NXP Semiconductors, PBSS5160V T/R Datasheet - Page 10

• Manufacturer Part Number: PBSS5160V T/R
• Description: Transistors Bipolar - BJT TRANS BISS TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PBSS5160V T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 80 V
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 220 MHz
• Dc Collector/base Gain Hfe Min: 200 at 1 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SS-Mini
• Continuous Collector Current: 1 A
• Maximum Power Dissipation: 500 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 4000
• Part # Aliases: PBSS5160V,115

NXP Semiconductors
8. Package outline
Fig 13. Package outline SOT666
PBSS5160V_3
Product data sheet
Plastic surface-mounted package; 6 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT666
0.6
0.5
A
S
0.27
0.17
b
p
pin 1 index
0.18
0.08
c
IEC
Y S
1
6
e 1
1.7
1.5
D
D
e
1.3
1.1
b p
E
5
2
JEDEC
0
1.0
e
3
REFERENCES
4
Rev. 03 — 14 December 2009
0.5
e
1
w
A
M
A
1.7
1.5
H
E
scale
JEITA
1
0.3
0.1
L
p
0.1
w
A
60 V, 1 A PNP low V
0.1
y
2 mm
H E
E
detail X
PROJECTION
EUROPEAN
PBSS5160V
L p
CEsat
c
© NXP B.V. 2009. All rights reserved.
X
(BISS) transistor
ISSUE DATE
04-11-08
06-03-16
SOT666
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