BSP52 T/R NXP Semiconductors, BSP52 T/R Datasheet - Page 3

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BSP52 T/R

Manufacturer Part Number
BSP52 T/R
Description
Transistors Bipolar - BJT TRANS DARLINGTON TAPE-7
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BSP52 T/R

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
90 V
Collector- Emitter Voltage Vceo Max
80 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
1 A
Dc Collector/base Gain Hfe Min
1000 at 150 mA at 10 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-223-4
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
1000
Part # Aliases
BSP52,115
NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm
CHARACTERISTICS
T
Note
1. Pulse test: t
1999 Apr 23
R
R
I
I
h
V
V
f
Switching times (between 10% and 90% levels); see Fig.3
t
t
j
CES
EBO
T
on
off
SYMBOL
SYMBOL
FE
= 25 °C unless otherwise specified.
CEsat
BEsat
NPN Darlington transistors
th j-a
th j-s
For other mounting conditions, see “Thermal considerations for the SOT223 in the General Part of associated
Handbook“.
thermal resistance from junction to ambient
thermal resistance from junction to solder point
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter saturation
voltage
transition frequency
turn-on time
turn-off time
p
BSP50
BSP51
BSP52
≤ 300 μs; δ ≤ 0.02.
PARAMETER
PARAMETER
V
V
V
I
V
I
I
T
I
I
I
I
C
C
C
C
C
Con
Boff
j
BE
BE
BE
CE
I
I
= 150 °C
= 0; V
= 500 mA; I
= 500 mA; I
= 500 mA; I
= 500 mA; V
C
C
= −0.5 mA
= 0; V
= 0; V
= 0; V
= 500 mA; I
= 10 V; note 1; see Fig.2
= 150 mA
= 500 mA
EB
CE
CE
CE
= 4 V
CONDITIONS
3
= 45 V
= 60 V
= 80 V
B
B
B
CE
= 0.5 mA
= 0.5 mA;
= 0.5 mA
Bon
= 5 V; f = 100 MHz −
note 1
= 0.5 mA;
CONDITIONS
BSP50; BSP51; BSP52
1 000
2 000
MIN.
VALUE
96
17
200
500
1 300
TYP.
Product data sheet
50
50
50
50
1.3
1.3
1.9
MAX.
UNIT
K/W
K/W
2
.
nA
nA
nA
nA
V
V
V
MHz
ns
ns
UNIT

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