BC327-40 T/R NXP Semiconductors, BC327-40 T/R Datasheet - Page 8

• Manufacturer Part Number: BC327-40 T/R
• Description: Transistors Bipolar - BJT TRANS GP TAPE RADIAL
• Manufacturer: NXP Semiconductors

Specifications of BC327-40 T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.5 A
• Gain Bandwidth Product Ft: 80 MHz
• Dc Collector/base Gain Hfe Min: 250 at 100 mA at 1 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-54
• Dc Current Gain Hfe Max: 250 at 100 mA at 1 V
• Maximum Power Dissipation: 625 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 2000
• Part # Aliases: BC327-40,116

NXP Semiconductors
BC807_BC807W_BC327_6
Product data sheet
Fig 7.
Fig 9.
V
CEsat
−10
−10
(V)
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
−1
−1
−2
−10
I
Selection -16: Collector-emitter saturation
voltage as a function of collector current;
typical values
I
Selection -40: Collector-emitter saturation voltage as a function of collector current; typical values
C
C
−1
amb
amb
amb
amb
amb
amb
/I
/I
B
B
= 10
= 10
= 150 °C
= 25 °C
= −55 °C
= 150 °C
= 25 °C
= −55 °C
−1
−10
(1)
(3)
(2)
V
−10
−10
−10
CEsat
(V)
−10
−1
−1
−2
−3
−10
2
−1
I
006aaa125
C
(mA)
Rev. 06 — 17 November 2009
−10
−1
3
−10
(1)
(3)
Fig 8.
(2)
V
BC807; BC807W; BC327
−10
−10
−10
CEsat
(V)
(1) T
(2) T
(3) T
45 V, 500 mA PNP general-purpose transistors
−1
−10
−1
−2
−3
−10
I
Selection- 25: Collector-emitter saturation
voltage as a function of collector current;
typical values
2
C
−1
amb
amb
amb
/I
I
006aaa127
C
B
(mA)
= 10
= 150 °C
= 25 °C
= −55 °C
−10
−1
3
−10
(1)
(3)
(2)
−10
© NXP B.V. 2009. All rights reserved.
2
I
006aaa126
C
(mA)
−10
3
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