BC327-40 T/R NXP Semiconductors, BC327-40 T/R Datasheet - Page 17
![no-image](/images/manufacturer_photos/0/4/487/nxp_semiconductors_sml.jpg)
BC327-40 T/R
Manufacturer Part Number
BC327-40 T/R
Description
Transistors Bipolar - BJT TRANS GP TAPE RADIAL
Manufacturer
NXP Semiconductors
Datasheet
1.BC807-16_TR.pdf
(19 pages)
Specifications of BC327-40 T/R
Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
50 V
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
0.5 A
Gain Bandwidth Product Ft
80 MHz
Dc Collector/base Gain Hfe Min
250 at 100 mA at 1 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-54
Dc Current Gain Hfe Max
250 at 100 mA at 1 V
Maximum Power Dissipation
625 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
2000
Part # Aliases
BC327-40,116
NXP Semiconductors
10. Revision history
Table 10.
BC807_BC807W_BC327_6
Product data sheet
Document ID
BC807_BC807W_
BC327_6
Modifications:
BC807_BC807W_
BC327_5
BC807_4
BC807W_3
BC327_3
Revision history
Release date
20091117
20050221
20040116
19990518
19990415
•
•
•
•
This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
Table 3
Figure 13 “Package outline SOT23
Figure 14 “Package outline SOT323
“Pinning”: updated
Rev. 06 — 17 November 2009
Data sheet status
Product data sheet
Product data sheet
Product specification
Product specification
Product specification
BC807; BC807W; BC327
(TO-236AB)”: updated
45 V, 500 mA PNP general-purpose transistors
(SC-70)”: updated
Change notice
-
CPCN200302007F
CPCN200405006F
-
-
-
Supersedes
BC807_BC807W_
BC327_5
BC807_4; BC807W_3;
BC327_3
BC807_3
BC807W_808W_CNV_2
BC327_2
© NXP B.V. 2009. All rights reserved.
17 of 19