RX1214B300Y TRAY NXP Semiconductors, RX1214B300Y TRAY Datasheet - Page 6

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RX1214B300Y TRAY

Manufacturer Part Number
RX1214B300Y TRAY
Description
Transistors Bipolar - BJT BULKTR TNS-MICP
Manufacturer
NXP Semiconductors
Datasheet

Specifications of RX1214B300Y TRAY

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
65 V
Collector- Emitter Voltage Vceo Max
60 V
Emitter- Base Voltage Vebo
3 V
Collector-emitter Saturation Voltage
3 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-439
Continuous Collector Current
21 A
Maximum Power Dissipation
570 mW
Factory Pack Quantity
4
Part # Aliases
RX1214B300Y,114
Philips Semiconductors
1997 Feb 19
handbook, full pagewidth
NPN microwave power transistor
Z
o
= 5 ; V
CC
= 50 V; P
Fig.6 Input and optimum load impedances as functions of frequency; typical values.
L
= 250 W; T
mb
+ j
j
= 25 C; t
0
0.2
0.2
p
= 150 s; = 5 %; class C operation.
Z L
0.5
0.5
0.2
1.4
1.3
Z i
1.3
1.2 GHz
1.2
0.5
1.4 GHz
6
1
1
1
2
2
2
5
10
MCD631
5
5
10
10
RX1214B300Y
Product specification

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