BCV62B /T3 NXP Semiconductors, BCV62B /T3 Datasheet - Page 11

• Manufacturer Part Number: BCV62B /T3
• Description: Transistors Bipolar - BJT TRANS MATCHED PAIR TAPE-11
• Manufacturer: NXP Semiconductors

Specifications of BCV62B /T3

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Dual
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 30 V
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: 6 V
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 100 at 100 uA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-143
• Continuous Collector Current: 0.1 A
• Maximum Power Dissipation: 250 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 10000
• Part # Aliases: BCV62B,235

NXP Semiconductors
12. Revision history
Table 10.
BCV62
Product data sheet
Document ID
BCV62 v.4
Modifications:
BCV62_3
BCV62_CNV_2
Revision history
Release date
20100726
19990408
19970618
•
•
•
•
•
•
•
•
•
•
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Section 1 “Product
Section 3 “Ordering
Section 4
Figure
Section 8 “Test
Figure
Section 10 “Packing
Section 11
Section 13 “Legal
1, 2, 3, 4, 5, 6, 7, 8, 9, 10,
16: superseded by minimized package outline drawing
All information provided in this document is subject to legal disclaimers.
“Marking”: updated
“Soldering”: added
Data sheet status
Product data sheet
Product specification
Product specification
information”: added
information”: updated
profile”: amended
Rev. 4 — 26 July 2010
information”: added
information”: added
11
and 12: added
PNP general-purpose double transistors
Change notice
-
-
-
Supersedes
BCV62_3
BCV62_CNV_2
-
© NXP B.V. 2010. All rights reserved.
BCV62
11 of 14