BC857BM T/R NXP Semiconductors, BC857BM T/R Datasheet - Page 10

• Manufacturer Part Number: BC857BM T/R
• Description: Transistors Bipolar - BJT TRANS GP TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of BC857BM T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 220 at 2 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-883
• Continuous Collector Current: 0.1 A
• Maximum Power Dissipation: 430 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 10000
• Part # Aliases: BC857BM,315

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NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Contact information
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R75/02/pp10
Date of release: 2004 Mar 10
Document order number: 9397 750 12839