PBSS2515VS T/R NXP Semiconductors, PBSS2515VS T/R Datasheet - Page 6

• Manufacturer Part Number: PBSS2515VS T/R
• Description: Transistors Bipolar - BJT TRANS BISS TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PBSS2515VS T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Dual
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 15 V
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: 6 V
• Gain Bandwidth Product Ft: 420 MHz
• Dc Collector/base Gain Hfe Min: 200 at 10 mA at 2 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SS-Mini
• Continuous Collector Current: 0.5 A
• Maximum Power Dissipation: 200 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 4000
• Part # Aliases: PBSS2515VS,115

NXP Semiconductors
2004 Dec 23
handbook, halfpage
15 V low V
R CEsat
I
(1) T
(2) T
(3) T
Fig.6
C
(Ω)
/I
B
10
10
= 20.
10
−1
amb
amb
amb
10
1
2
−1
= 150 °C.
= 25 °C.
= −55 °C.
Equivalent on-resistance as a function of
collector current; typical values.
CE(sat)
1
(1)
(3)
NPN double transistor
10
(2)
10
2
I C (mA)
MLD648
10
3
6
handbook, halfpage
T
(1) I
(2) I
(3) I
(4) I
(5) I
Fig.7
amb
(mA)
1200
I C
800
400
B
B
B
B
B
= 25 °C.
0
= 4.6 mA.
= 4.14 mA.
= 3.68 mA.
= 3.22 mA.
= 2.76 mA.
0
Collector current as a function of
collector-emitter voltage; typical values.
2
(6) I
(7) I
(8) I
(9) I
(10) I
4
B
B
B
B
B
= 2.3 mA.
= 1.84 mA.
= 1.38 mA.
= 0.92 mA.
= 0.46 mA.
(4)
6
(3)
PBSS2515VS
(2)
Product data sheet
8
(10)
V CE (V)
(1)
(5)
(6)
(7)
(8)
(9)
MLD644
10