BC817-25E6327 Infineon Technologies, BC817-25E6327 Datasheet - Page 3

• Manufacturer Part Number: BC817-25E6327
• Description: Transistors Bipolar - BJT NPN 45 V 500 mA
• Manufacturer: Infineon Technologies

Specifications of BC817-25E6327

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 1 A
• Gain Bandwidth Product Ft: 170 MHz
• Dc Collector/base Gain Hfe Min: 160
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Continuous Collector Current: 500 mA
• Maximum Power Dissipation: 330 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000

Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
I
Collector-base breakdown voltage
I
I
Emitter-base breakdown voltage
I
Collector-base cutoff current
V
V
Emitter-base cutoff current
V
DC current gain
I
I
I
I
Collector-emitter saturation voltage
I
Base emitter saturation voltage
I
1
C
C
C
C
E
C
C
C
C
C
C
Pulse test: t < 300µs; D < 2%
CB
CB
EB
= 10 µA, I
= 10 mA, I
= 10 mA, I
= 10 µA, I
= 10 µA, I
= 100 mA, V
= 100 mA, V
= 100 mA, V
= 500 mA, V
= 500 mA, I
= 500 mA, I
= 4 V, I
= 25 V, I
= 25 V, I
C
C
E
E
B
B
E
E
= 0
= 0 , BC817...
= 0 , BC818...
= 0
B
B
= 0 , BC817...
= 0 , BC818...
CE
CE
CE
CE
= 0
= 0 , T
1)
= 50 mA
= 50 mA
= 1 V, h
= 1 V, h
= 1 V, h
= 1 V, all h
A
= 150 °C
FE
FE
FE
-grp.16
-grp.25
-grp.40
FE
1)
A
-grps.
= 25°C, unless otherwise specified
1)
3
Symbol
V
V
V
I
I
h
V
V
CBO
EBO
FE
(BR)CEO
(BR)CBO
(BR)EBO
CEsat
BEsat
min.
100
160
250
40
45
25
50
30
5
-
-
-
-
-
BC817K.../BC818K...
Values
160
250
350
typ.
-
-
-
-
-
-
-
-
-
-
-
max.
250
400
630
100
0.1
0.7
1.2
50
2011-09-19
-
-
-
-
-
-
Unit
V
-
V
µA
nA
-
V