BC817-25E6327 Infineon Technologies, BC817-25E6327 Datasheet - Page 2

• Manufacturer Part Number: BC817-25E6327
• Description: Transistors Bipolar - BJT NPN 45 V 500 mA
• Manufacturer: Infineon Technologies

Specifications of BC817-25E6327

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 1 A
• Gain Bandwidth Product Ft: 170 MHz
• Dc Collector/base Gain Hfe Min: 160
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Continuous Collector Current: 500 mA
• Maximum Power Dissipation: 330 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000

Maximum Ratings
Parameter
Collector-emitter voltage
BC817...
BC818...
Collector-base voltage
BC817...
BC818...
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation-
T
T
Junction temperature
Storage temperature
1
Thermal Resistance
Parameter
Junction - soldering point
BC817K, BC818K
BC817KW, BC818KW
For calculation of R thJA please refer to Application Note AN077 (Thermal Resistance Calculation)
S
S
≤ 115 °C, BC817K, BC818K
≤ 130 °C, BC817KW, BC818KW
1)
2
Symbol
V
V
V
I
I
I
I
P
T
T
Symbol
R
C
CM
B
BM
j
stg
CEO
CBO
EBO
tot
thJS
BC817K.../BC818K...
-65 ... 150
Value
Value
1000
500
250
≤ 70
≤ 80
500
100
200
150
45
25
50
30
5
2011-09-19
Unit
V
mA
mW
°C
Unit
K/W