BSV52 T/R NXP Semiconductors, BSV52 T/R Datasheet - Page 4

• Manufacturer Part Number: BSV52 T/R
• Description: Transistors Bipolar - BJT TRANS GP TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of BSV52 T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 20 V
• Collector- Emitter Voltage Vceo Max: 12 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Dc Collector/base Gain Hfe Min: 25
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Continuous Collector Current: 0.1 A
• Maximum Power Dissipation: 250 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: BSV52,215

NXP Semiconductors
2004 Jan 14
handbook, full pagewidth
NPN switching transistor
V
R1 = 56 Ω; R2 = 1 kΩ; R
V
Oscilloscope: input impedance Z
i
BB
= 0.5 V to 4.2 V; T = 500 µs; t
= 0.2 V; V
CC
= 2.7 V.
B
= 1 kΩ; R
p
i
= 10 µs; t
= 50 Ω.
C
= 270 Ω.
oscilloscope
r
= t
s
V i
≤ 3 ns.
Fig.2 Test circuit for switching times.
(probe)
450 Ω
R1
R2
R B
V BB
4
R C
V CC
DUT
V o
MLB826
(probe)
450 Ω
oscilloscope
Product data sheet
BSV52