BC847BV T/R NXP Semiconductors, BC847BV T/R Datasheet - Page 15

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BC847BV T/R

Manufacturer Part Number
BC847BV T/R
Description
Transistors Bipolar - BJT TRANS DOUBLE TAPE-7
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BC847BV T/R

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Dual
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
50 V
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Collector-emitter Saturation Voltage
5 V
Gain Bandwidth Product Ft
100 MHz
Dc Collector/base Gain Hfe Min
200 at 2 mA at 5 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-666
Continuous Collector Current
0.1 A
Maximum Power Dissipation
300 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
4000
Part # Aliases
BC847BV,115
NXP Semiconductors
11. Revision history
Table 10.
BC847_SER
Product data sheet
Document ID
BC847_SER v.8
Modifications:
BC847_BC547_SER v.7
BC847_BC547_SER v.6
Revision history
Release date
20120820
20081210
20050519
Type numbers removed: BC847B/DG, BC847BW/DG, BC847AT/DG, BC857, BC857B
and BC857C
Section 12 “Legal
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Product data sheet
Product data sheet
Rev. 8 — 20 August 2012
information”: updated
45 V, 100 mA NPN general-purpose transistors
Change notice Supersedes
-
-
-
BC847 series
BC847_BC547_SER v.7
BC847_BC547_SER v.6
-
© NXP B.V. 2012. All rights reserved.
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