PBSS2515M T/R NXP Semiconductors, PBSS2515M T/R Datasheet - Page 3

• Manufacturer Part Number: PBSS2515M T/R
• Description: Transistors Bipolar - BJT TRANS BISS TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PBSS2515M T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 15 V
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: 6 V
• Gain Bandwidth Product Ft: 420 MHz
• Dc Collector/base Gain Hfe Min: 200 at 10 mA at 2 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SC-101
• Continuous Collector Current: 0.5 A
• Maximum Power Dissipation: 430 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 10000
• Part # Aliases: PBSS2515M,315

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Refer to SOT883 standard mounting conditions.
2. Device mounted on an FR4 printed-circuit board, single-sided copper, tinplated, standard footprint, with 60 μm
3. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
THERMAL CHARACTERISTICS
Notes
1. Refer to SOT883 standard mounting conditions.
2. Device mounted on an FR4 printed-circuit board, single-sided copper, tinplated, standard footprint, with 60 μm
3. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
4. Operated under pulsed conditions: duty cycle δ ≤ 20%, pulse width t
Soldering
Reflow soldering is the only recommended soldering method.
2003 Sep 15
V
V
V
I
I
I
P
T
T
T
R
SYMBOL
SYMBOL
C
CM
BM
stg
j
amb
CBO
CEO
EBO
tot
15 V, 0.5 A
NPN low V
th j-a
copper strip line.
copper strip line.
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
thermal resistance from junction to
ambient
CEsat
PARAMETER
PARAMETER
(BISS) transistor
open emitter
open base
open collector
notes 1 and 2
T
T
in free air; notes 1 and 2
in free air; notes 1, 3 and 4
amb
amb
≤ 25 °C; notes 1 and 2
≤ 25 °C; note 1 and 3
3
CONDITIONS
CONDITIONS
p
≤ 30 ms.
−
−
−
−
−
−
−
−
−65
−
−65
MIN.
VALUE
500
290
PBSS2515M
15
15
6
500
1
100
250
430
+150
150
+150
MAX.
Product data sheet
UNIT
K/W
K/W
V
V
V
mA
A
mA
mW
mW
°C
°C
°C
2
2
.
.
UNIT