BCX70K /T3 NXP Semiconductors, BCX70K /T3 Datasheet - Page 3

• Manufacturer Part Number: BCX70K /T3
• Description: Transistors Bipolar - BJT TRANS GP TAPE-11
• Manufacturer: NXP Semiconductors

Specifications of BCX70K /T3

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 45 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 250 MHz
• Dc Collector/base Gain Hfe Min: 100 at 10 uA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Continuous Collector Current: 0.1 A
• Maximum Power Dissipation: 250 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 10000
• Part # Aliases: BCX70K,235

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004 Jan 16
V
V
V
I
I
I
P
T
T
T
R
C
CM
BM
SYMBOL
SYMBOL
stg
j
amb
CBO
CEO
EBO
tot
NPN general purpose transistors
th(j-a)
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
thermal resistance from junction to ambient
PARAMETER
PARAMETER
3
open emitter
open base
open collector
T
note 1
amb
CONDITIONS
CONDITIONS
≤ 25 °C
−
−
−
−
−
−
−
−65
−
−65
MIN.
VALUE
500
BCX70 series
45
45
5
100
200
200
250
+150
150
+150
MAX.
Product data sheet
UNIT
K/W
V
V
V
mA
mA
mA
mW
°C
°C
°C
UNIT