PMP4201V T/R NXP Semiconductors, PMP4201V T/R Datasheet
PMP4201V T/R
Manufacturer Part Number
PMP4201V T/R
Description
Transistors Bipolar - BJT MATCHED PAIR TRANS TAPE-7
Manufacturer
NXP Semiconductors
Datasheet
1.PMP4201V_TR.pdf
(14 pages)
Specifications of PMP4201V T/R
Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Dual
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
50 V
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
6 V
Maximum Dc Collector Current
0.1 A
Gain Bandwidth Product Ft
250 MHz
Dc Collector/base Gain Hfe Min
200 at 2 mA at 5 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SS-Mini
Dc Current Gain Hfe Max
200 at 2 mA at 5 V
Maximum Power Dissipation
300 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
4000
Part # Aliases
PMP4201V,115
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
NPN/NPN matched double transistors in small Surface-Mounted Device (SMD) plastic
packages. The transistors in the SOT666 and SOT363 (SC-88) packages are fully isolated
internally.
Table 1.
I
I
I
I
I
I
Table 2.
Type number
PMP4201V
PMP4201G
PMP4201Y
Symbol
Per transistor
V
I
h
C
FE
CEO
PMP4201V; PMP4201G;
PMP4201Y
NPN/NPN matched double transistors
Rev. 04 — 28 August 2009
Current gain matching
Base-emitter voltage matching
Common emitter configuration for SOT353 types
Application-optimized pinout
Current mirror
Differential amplifier
Product overview
Quick reference data
Parameter
collector-emitter voltage
collector current
DC current gain
Package
NXP
SOT666
SOT353
SOT363
JEITA
-
SC-88A
SC-88
Conditions
open base
V
I
C
CE
= 2 mA
= 5 V;
NPN/NPN h
0.95 complement
PMP4501V
PMP4501G
PMP4501Y
Min
-
-
200
FE1
/h
FE2
Typ
-
-
290
Product data sheet
PNP/PNP
complement
PMP5201V
PMP5201G
PMP5201Y
Max
45
100
450
Unit
V
mA
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