MT46H16M16LFBF-6:A TR Micron Technology Inc, MT46H16M16LFBF-6:A TR Datasheet - Page 9

• Manufacturer Part Number: MT46H16M16LFBF-6:A TR
• Description: IC DDR SDRAM 256MBIT 60VFBGA
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H16M16LFBF-6:A TR

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 256M (16Mx16)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 60-VFBGA
• Organization: 16Mx16
• Density: 256Mb
• Address Bus: 15b
• Access Time (max): 6.5/5ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 100mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1319-2

Ballouts and Ball Descriptions
Figure 4:
PDF: 09005aef82091978 / Source: 09005aef8209195b
MT46H16M16LF__2.fm - Rev. H 6/08 EN
60-Ball VFBGA Ball Assignments – 8mm x 9mm (Top View)
Notes:
1. D9 is a test pin that must be connected to V
A
B
C
D
E
F
G
H
J
K
V
V
V
V
CKE
V
V
V
DD
DD
A9
A6
1
SS
SS
SS
SS
SS
Q
Q
Q
Q
DQ15
DQ13
DQ11
UDQS
UDM
DQ9
A11
CK
A7
A4
2
DQ14
DQ12
DQ10
V
DQ8
CK#
A12
NC
A8
A5
SS
3
Q
9
4
Ball Down
5
Micron Technology, Inc., reserves the right to change products or specifications without notice.
256Mb: x16, x32 Mobile DDR SDRAM
SS
6
or V
SS
A10/AP
Q in normal operation.
V
DQ1
DQ3
DQ5
DQ7
WE#
CS#
NC
DD
A2
7
Q
LDQS
CAS#
LDM
DQ0
DQ2
DQ4
DQ6
BA0
A0
A3
8
General Description
©2005 Micron Technology, Inc. All rights reserved.
V
TEST
V
RAS#
V
V
V
BA1
V
DD
DD
A1
SS
9
DD
DD
DD
Q
Q
Q
1