BC807-16W RF Taiwan Semiconductor, BC807-16W RF Datasheet - Page 2

• Manufacturer Part Number: BC807-16W RF
• Description: Transistors Bipolar - BJT Transistor 200mW
• Manufacturer: Taiwan Semiconductor

Specifications of BC807-16W RF

• Rohs: yes

Type Number
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter saturation voltage
Transition frequency
Small Signal Diode
Electrical Characteristics
Tape & Reel specification
D
T
Any Additional Label (If Required)
C
d
A
B
TSC label
P1
P0
Carieer Tape
at-V
at-V
CE
CE
Top Cover Tape
V
=1V,-Ic=100mA
=1V,-Ic=500mA
CE
D2
= 5V
F
E
W1
D1
at-Ic=10uA
at-Ic=10mA
at-Ic=10uA
at=V
at=V
at=V
at-
Ic=500mA
I
C
W
= 10mA
CB
CB
EB
= 20V,T
= 5V
= 20V
-16W
-25W
-40W
I
f= 100MHz
B
J
= 50mA
=150℃
Symbol
V
V
V
V
(BR)CBO
(BR)CEO
(BR)EBO
I
I
CE(sat)
h
CBO
EBO
f
200mW, PNP Small Signal Transistor
FE
T
Carrier width
Carrier length
Carrier depth
Sprocket hole
Reel outside diameter
Reel inner diameter
Feed hole width
Sprocke hole position
Punch hole position
Sprocke hole pitch
Embossment center
Overall tape thickness
Tape width
Reel width
Item
Min
100
160
250
50
45
40
80
5
-
-
-
Direction of Feed
BC807-16W/25W/40W
Symbol
W1
D1
D2
P0
P1
W
C
D
A
B
E
F
T
d
Max
100
100
250
400
600
0.7
5
-
-
-
-
Dimension(mm)
0.229 ±0.013
12.30 ±0.20
1.50 ± 0.10
13.0 ± 0.20
1.75 ±0.10
3.50 ±0.05
4.00 ±0.10
2.00 ±0.05
8.10 ±0.20
3.15 ±0.10
2.77 ±0.10
1.22 ±0.10
178 ± 1
55 Min
Version : A11
Units
MHz
nA
uA
nA
V
V
V
V
-
-
-