BC807-40 Taiwan Semiconductor, BC807-40 Datasheet
BC807-40
Manufacturer Part Number
BC807-40
Description
Manufacturer
Taiwan Semiconductor
Datasheet
1.BC807-40.pdf
(2 pages)
Specifications of BC807-40
Transistor Polarity
PNP
Number Of Elements
1
Collector-emitter Voltage
45V
Collector-base Voltage
50V
Emitter-base Voltage
5V
Collector Current (dc) (max)
500mA
Dc Current Gain (min)
250
Power Dissipation
300mW
Frequency (max)
100MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Lead Free Status / Rohs Status
Compliant
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Part Number
Manufacturer
Quantity
Price
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Part Number:
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Features
Mechanical Data
Maximum Ratings
Type Number
Collector-base breakdown voltage
Collector-emitter breakdown voltage I
Collector current - continuous
Power dissipation
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage I
Base-emitter saturation voltage
Transition frequency
Operating and Storage Temperature Range
Type Number
DC current gain
Pb
Ideally suited for automatic insertion
Epitaxial planar die construction
For switching, AF driver and amplifier
applications
Complementary NPN type available(BC817)
Qualified to AEC-Q101 standards for high
reliability
Case: SOT-23, Molded plastic
Case material: molded plastic. UL flammability
classification rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIIL-STD-202,
Lead free plating
Marking: -16:5A, -25: 5B, -40: 5C
Weight: 0.008 grams(approximate)
RoHS
RoHS
COMPLIANCE
COMPLIANCE
Method 208
807-40
807-16
807-25
V
CE
T
=-5V I
A
=25
C
o
=-10mA f=100MHz
I
C unless otherwise specified
V
C
C
V
=-500mA, I
=-500mA, I
CE
I
V
V
0.3 Watts PNP Plastic-Encapsulate Transistors
I
E
EB
C
C
CB
CE
=-1uA, I
=-1V I
=-10mA, I
=-10uA, I
=-4V I
=-45V I
=-40V I
C
C
=-100mA
C
=0
B
B
=0
E
B
E
=-50mA
=-50mA
B
=0
=0
=0
=0
Symbol
Symbol
T
V
V
J
H
V
V
CE
BE
V
I
I
, T
I
CBO
CEO
EBO
P
FE(1)
CBO
CEO
EBO
I
f
Dimensions in inches and (millimeters)
(sat)
C
(sat)
T
C
STG
BC807
-16
Min
100
160
250
SOT-23
-55 to + 150
BC807
-0.5
-0.1
-0.2
-0.1
-0.7
-1.2
100
-25
-50
-45
0.3
-5
BC807-16
BC807-25
BC807-40
Version: B07
Max
250
400
600
BC807
-40
Units
Units
MHz
uA
uA
uA
o
W
V
V
A
V
V
V
C
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BC807-40 Summary of contents
Page 1
... CEO V =- EBO =-500mA, I =-50mA V (sat =-500mA, I =-50mA V (sat STG Symbol H FE(1) =-1V I =-100mA CE C BC807-16 BC807-25 BC807-40 SOT-23 BC807 BC807 BC807 Units -16 -25 -40 -50 V -45 V -0 -0.1 uA -0.2 uA -0.1 uA -0.7 V -1.2 V 100 MHz o - 150 C Min Max Units 100 250 160 ...
Page 2
... RATINGS AND CHARACTERISTIC CURVES(BC807-16, BC807-25, BC807-40) FIG.1- POWER DERATING CURVE 400 SEE NOTE1 SEE NOTE1 300 200 100 100 150 T , SUBSTRATE TEMPERATURE ( C) SB FIG.3-COLLECTOR SAT VOLTAGE VS COLLECTOR CURRENT 1000 100 O O - 150 C 150 C 1 0.1 0 0.1 0.2 0 COLLECTOR SATURATION VOLTAGE (V) CESAT FIG ...