BT138-600E/DGQ NXP Semiconductors, BT138-600E/DGQ Datasheet - Page 7

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BT138-600E/DGQ

Manufacturer Part Number
BT138-600E/DGQ
Description
Triacs
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BT138-600E/DGQ

Rohs
yes
NXP Semiconductors
BT138-600E
Product data sheet
Symbol
Fig. 7.
V
I
Dynamic characteristics
dV
t
D
gt
GT
I
GT(25°C)
D
/dt
I
GT
3
2
1
0
-50
(1) T2- G+
(2) T2- G-
(3) T2+ G-
(4) T2+ G+
Normalized gate trigger current as a function of
junction temperature
Parameter
gate trigger voltage
off-state current
rate of rise of off-state
voltage
gate-controlled turn-on
time
0
(1)
(2)
(3)
(4)
50
(1)
(2)
(3)
(4)
100
Conditions
All information provided in this document is subject to legal disclaimers.
V
Fig. 11
V
Fig. 11
V
V
of V
open circuit
I
dt = 5 A/µs
TM
D
D
D
DM
T
003aaj946
j
= 12 V; I
= 400 V; I
= 600 V; T
(°C)
= 16 A; V
DRM
= 402 V; T
150
); exponential waveform; gate
T
T
D
= 0.1 A; T
25 July 2012
j
= 0.1 A; T
= 125 °C
= 600 V; I
j
= 125 °C; (V
Fig. 8.
j
I
L(25°C)
= 25 °C;
j
G
I
= 125 °C;
L
= 0.1 A; dI
DM
3
2
1
0
-50
Normalized latching current as a function of
junction temperature
= 67%
G
/
0
Min
-
0.25
-
-
-
50
Typ
0.7
0.4
0.1
150
2
BT138-600E
100
© NXP B.V. 2012. All rights reserved
T
003aaj947
j
(°C)
Max
1.5
-
0.5
-
-
150
4Q Triac
Unit
V
V
mA
V/µs
µs
7 / 12

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