BT138-600E/DGQ NXP Semiconductors, BT138-600E/DGQ Datasheet - Page 6

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BT138-600E/DGQ

Manufacturer Part Number
BT138-600E/DGQ
Description
Triacs
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BT138-600E/DGQ

Rohs
yes
NXP Semiconductors
6. Characteristics
Table 6.
BT138-600E
Product data sheet
Fig. 6.
Symbol
Static characteristics
I
I
I
V
GT
L
H
T
Z
(K/W)
th(j-mb)
10
10
10
10
-1
-2
-3
1
10
(1) Unidirectional (half cycle)
(2) Bidirectional (full cycle)
Transient thermal impedance from junction to mounting base as a function of pulse duration
-5
Characteristics
Parameter
gate trigger current
latching current
holding current
on-state voltage
10
-4
Conditions
All information provided in this document is subject to legal disclaimers.
V
T
V
T
V
T
V
T
V
T
V
T
V
T
V
T
V
I
T
10
j
j
j
j
j
j
j
j
D
D
D
D
D
D
D
D
D
= 15 A; T
= 25 °C;
= 25 °C;
= 25 °C;
= 25 °C;
= 25 °C;
= 25 °C;
= 25 °C;
= 25 °C;
-3
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; T
(1)
(2)
Fig. 7
Fig. 7
Fig. 7
Fig. 7
Fig. 8
Fig. 8
Fig. 8
Fig. 8
j
T
T
T
T
G
G
G
G
j
= 25 °C;
= 0.1 A; T2+ G+;
= 0.1 A; T2+ G-;
= 0.1 A; T2- G-;
= 0.1 A; T2- G+;
= 25 °C;
= 0.1 A; T2+ G+;
= 0.1 A; T2+ G-;
= 0.1 A; T2- G-;
= 0.1 A; T2- G+;
25 July 2012
10
-2
Fig. 10
Fig. 9
10
-1
Min
-
-
-
-
-
-
-
-
-
-
1
P
D
Typ
2.5
4
5
11
-
-
-
-
-
1.4
BT138-600E
t
p
t
© NXP B.V. 2012. All rights reserved
p
(s)
003aaj343
Max
10
10
10
25
30
40
30
40
30
1.65
t
10
4Q Triac
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
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