BTA208-800B/DG,127 NXP Semiconductors, BTA208-800B/DG,127 Datasheet - Page 3

• Manufacturer Part Number: BTA208-800B/DG,127
• Description: Triacs 3Q HI-COM TRIAC
• Manufacturer: NXP Semiconductors

Specifications of BTA208-800B/DG,127

• Rohs: yes
• Mounting Style: Through Hole
• Package / Case: TO-220AB-3
• Factory Pack Quantity: 50

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
BTA208-800B
Product data sheet
Symbol
V
I
I
I
dI
I
V
P
P
T
T
T(RMS)
TSM
2
GM
Fig 1.
stg
j
DRM
t
GM
GM
G(AV)
T
/dt
I
T(RMS)
(A)
10
8
6
4
2
0
temperature; maximum values
RMS on-state current as a function of heatsink
50
Limiting values
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state
current
rate of rise of on-state current
peak gate current
peak gate voltage
peak gate power
average gate power
storage temperature
junction temperature
I
2
t for fusing
0
50
102 C
100
All information provided in this document is subject to legal disclaimers.
T
003aaf581
mb
( C)
150
Rev. 02 — 12 April 2011
Conditions
full sine wave; T
see
full sine wave; T
see
full sine wave; T
t
I
over any 20 ms period
p
T
= 10 ms; sine-wave pulse
= 12 A; I
Figure
Figure
G
2; see
4; see
Fig 2.
= 0.2 A; dI
I
T(RMS)
(A)
mb
j(init)
j(init)
25
20
15
10
Figure 3
Figure 5
5
0
≤ 102 °C; see
10
duration; maximum value
RMS on-state current as a function of surge
= 25 °C; t
= 25 °C; t
2
G
/dt = 0.2 A/µs
p
p
= 20 ms;
= 16.7 ms
10
Figure
1
BTA208-800B
1;
surge duration (s)
1
Min
-
-
-
-
-
-
-
-
-
-
-40
-
© NXP B.V. 2011. All rights reserved.
3Q Hi-Com Triac
003aaf617
100
150
Max
800
8
65
71
21
2
5
5
0.5
125
10
Unit
V
A
A
A
A
A/µs
A
V
W
W
°C
°C
3 of 13
2
s