IS42S32200E-6BLI-TR ISSI, Integrated Silicon Solution Inc, IS42S32200E-6BLI-TR Datasheet - Page 36

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IS42S32200E-6BLI-TR

Manufacturer Part Number
IS42S32200E-6BLI-TR
Description
IC SDRAM 64MBIT 166MHZ 90BGA
Manufacturer
ISSI, Integrated Silicon Solution Inc
Type
SDRAMr

Specifications of IS42S32200E-6BLI-TR

Format - Memory
RAM
Memory Type
SDRAM
Memory Size
64M (2Mx32)
Speed
166MHz
Interface
Parallel
Voltage - Supply
3.15 V ~ 3.45 V
Operating Temperature
-40°C ~ 85°C
Package / Case
90-BGA
Organization
2Mx32
Density
64Mb
Address Bus
13b
Access Time (max)
8/5.5ns
Maximum Clock Rate
166MHz
Operating Supply Voltage (typ)
3.3V
Package Type
TFBGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
160mA
Pin Count
90
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IS42S32200E-6BLI-TR
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
IS42S32200E
AC ELECTRICAL CHARACTERISTICS
Notes:
1. An initial pause of 100us is required after power up, followed by two AUTO REFRESH commands, before proper device
2. Measured with t
3. The reference level is 1.5V when measuring input signal timing. Rise/fall times are measured between V
4. Access time is measured at 1.5V with the load shown in the figure below.
5. The time t
6. CLK must be toggled a minimum of two times during this period.
36
Symbol
t
t
t
t
t
t
t
t
t
DPL3
DPL2
DAL3
DAL2
T
WR
XSR
RFC
REF
operation is ensured. (V
two AUTO REFRESH command wake-ups should be repeated anytime the t
(max.).
when the output is in the high impedance state.
Parameter
Input Data To Precharge
Command Delay time
Input Data To Active / Refresh
Command Delay time (During Auto-Precharge)
Transition Time
Write Recovery Time
Exit Self Refresh and Active Command
Auto Refresh Period
Refresh Cycle Time (4096)
HZ
(max.) is defined as the time required for the output voltage to transition by ± 200 mV from V
T
= 0.5 ns.
(2)
DD
and V
DDQ
must be powered up simultaneously. GND and GNDQ must be at same potential.) The
Condition
CAS Latency = 3
CAS Latency = 2
CAS Latency = 3
CAS Latency = 2
(6)
Integrated Silicon Solution, Inc. — www.issi.com —
(1,2,3)
1CLK+5ns —
2CLK+t
2CLK+t
2CLK
2CLK
Min.
0.3
55
60
RP
RP
-5
Max.
1.2
64
REF
refresh requirement is exceeded.
1CLK+6ns —
2CLK+t
2CLK+t
2CLK
2CLK
Min.
0.3
70
60
RP
RP
-6
Max.
1.2
64
1CLK+7ns —
2CLK+t
2CLK+t
OH
2CLK
2CLK
IH
Min.
0.3
70
70
(min.) and V
(min.) or V
RP
RP
-7
1-800-379-4774
Max.
1.2
64
OL
IL
Rev. 00D
Units
(max.)
06/02/08
ms
t
ns
ns
ns
ns
ns
ns
ns
CK

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