IS42S32200E-6BLI ISSI, Integrated Silicon Solution Inc, IS42S32200E-6BLI Datasheet - Page 54

• Manufacturer Part Number: IS42S32200E-6BLI
• Description: IC SDRAM 64MBIT 166MHZ 90BGA
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: SDRAMr

Specifications of IS42S32200E-6BLI

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 64M (2Mx32)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 3.15 V ~ 3.45 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 90-BGA
• Organization: 2Mx32
• Density: 64Mb
• Address Bus: 13b
• Access Time (max): 8/5.5ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 160mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS42S32200E, IS45S32200E
ALTERNATING BANK WRITE ACCESS
54
DQM0-DQM3
COMMAND
BA0, BA1
A0-A9
CKE
CLK
A10
DQ
t
t
CKS
CMS
t
t
t
BANK 0
AS
AS
AS
ACTIVE
ROW
ROW
T0
t
CKH
t
t
t
t
CMH
AH
AH
AH
t
t
t
t
RCD
RRD
RAS
RC
t
- BANK 0
CK
- BANK 0
- BANK 0
ENABLE AUTO PRECHARGE
T1
NOP
t
t
CMS
CL
t
COLUMN m
DS
BANK 0
WRITE
D
T2
IN
t
CMH
t
t
DH
m
CH
t
DS
D
T3
NOP
IN
t
m+
DH
1
t
BANK 1
DS
ACTIVE
ROW
ROW
D
T4
IN
t
m+
DH
2
t
RCD
t
DS
D
- BANK 1
ENABLE AUTO PRECHARGE
Integrated Silicon Solution, Inc. — www.issi.com
T5
IN
NOP
m+
t
DH
t
WR
3
- BANK 0
t
DS
BANK 1
COLUMN b
WRITE
T6
D
IN
t
DH
b
t
DS
D
t
T7
RP
NOP
IN
t
b+
- BANK 0
DH
1
t
DS
D
T8
NOP
IN
t
b+
DH
2
t
DS
ACTIVE
DON'T CARE
BANK 0
D
T9
ROW
ROW
IN
t
b+
t
t
DH
RCD
WR
07/12/2010
3
- BANK 1
- BANK 0
Rev. D