IS42S32200C1-7BLI-TR ISSI, Integrated Silicon Solution Inc, IS42S32200C1-7BLI-TR Datasheet - Page 33

• Manufacturer Part Number: IS42S32200C1-7BLI-TR
• Description: IC SDRAM 64MBIT 143MHZ 90BGA
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: SDRAMr

Specifications of IS42S32200C1-7BLI-TR

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 64M (2Mx32)
• Speed: 143MHz
• Interface: Parallel
• Voltage - Supply: 3.15 V ~ 3.45 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 90-BGA
• Organization: 2Mx32
• Density: 64Mb
• Address Bus: 13b
• Access Time (max): 8/5.5ns
• Maximum Clock Rate: 143MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: Mini BGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 180mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS42S32200C1
DC RECOMMENDED OPERATING CONDITIONS
(
Integrated Silicon Solution, Inc. — www.issi.com —
Rev. B
1/18/07
ABSOLUTE MAXIMUM RATINGS
CAPACITANCE CHARACTERISTICS
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a
2. All voltages are referenced to GND.
3. V
4. V
5. An initial pause of 100us is required after power up, followed by two AUTO REFRESH commands, before proper device operation
T
A
Symbol
V
V
V
V
P
I
T
T
V
V
Symbol
C
C
CI/O
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
is ensured. (Vdd and VddQ must be powered up simultaneously. GND and GNDQ must be at same potential.) The two AUTO
REFRESH command wake-ups should be repeated anytime the t
CS
= -40 to +85°C for Industrial, T
Symbol
OUT
OPR
STG
DD MAX
DDQ MAX
IN
D MAX
IH
IL
DD
DD
IN1
IN2
(min) = GND – 2.0V with a pulse < 3 ns. The pluse width cannot be greater than one third of the cycle rate.
V
V
(max) = V
, V
, V
IH
IL
DDQ
DDQ
DDQ
Parameter
Input Capacitance: A0-A10, BA0, BA1
Input Capacitance: (CLK, CKE, CS, RAS, CAS, WE, LDQM, UDQM)
Data Input/Output Capacitance: DQ0-DQ31
Parameter
Supply Voltage (-55)
Supply Voltage (-6, -7)
Input High Voltage
Input Low Voltage
Parameters
Maximum Supply Voltage
Maximum Supply Voltage for Output Buffer
Input Voltage
Output Voltage
Allowable Power Dissipation
Output Shorted Current
Operating Temperature
Storage Temperature
+ 2.0V with a pulse width
A
= 0 to +70°C for Commercial)
(4)
(3)
(1)
3 ns. The pluse width cannot be greater than one third of the cycle rate.
Min.
3.15
(1,2)
-0.3
3.0
2.0
(At T
Com.
Ind.
A
1-800-379-4774
Typ.
= 0 to +25°C, V
3.3
3.3
—
—
REF
(2,5)
refresh requirement is exceeded.
V
DD
Max.
3.45
+0.8
–1.0 to +4.6
–1.0 to +4.6
–1.0 to +4.6
–1.0 to +4.6
–55 to +150
3.6
–40 to +85
+ 0.3
0 to +70
Rating
DD
50
1
= V
Unit
DDQ
V
V
V
V
= 3.3 ± 0.3V, f = 1 MHz)
Unit
mA
°C
°C
W
V
V
V
V
Typ.
—
—
—
Max.
4
4
5
Unit
pF
pF
pF
33