MT46H4M32LFB5-5 IT:K TR Micron Technology Inc, MT46H4M32LFB5-5 IT:K TR Datasheet - Page 19

• Manufacturer Part Number: MT46H4M32LFB5-5 IT:K TR
• Description: IC DDR SDRAM 128MBIT 90VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT46H4M32LFB5-5 IT:K TR

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 128M (4Mx32)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 90-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 6: Capacitance (x16, x32)
Note 1 applies to all the parameters in this table
PDF: 09005aef8331b3e9
128mb_mobile_ddr_sdram_t35m.pdf - Rev. F 03/10 EN
Parameter
Input capacitance: CK, CK#
Delta input capacitance: CK, CK#
Input capacitance: command and address
Delta input capacitance: command and address
Input/output capacitance: DQ, DQS, DM
Delta input/output capacitance: DQ, DQS, DM
Notes:
1. This parameter is sampled. V
2. The input capacitance per pin group will not differ by more than this maximum amount
3. The I/O capacitance per DQS and DQ byte/group will not differ by more than this maxi-
2
they are matched in loading.
for any given device.
mum amount for any given device.
, V
OUT
(peak-to-peak) = 0.2V. DM input is grouped with I/O pins, reflecting the fact that
Symbol
19
C
C
C
C
C
DCK
C
DIO
DD
CK
DI
IO
I
/V
128Mb: x16, x32 Mobile LPDDR SDRAM
DDQ
Micron Technology, Inc. reserves the right to change products or specifications without notice.
= 1.70–1.95V, f = 100 MHz, T
Min
1.5
1.5
2.0
–
–
–
Max
Electrical Specifications
0.25
3.0
3.0
0.5
4.5
0.5
© 2007 Micron Technology, Inc. All rights reserved.
A
= 25˚C, V
Unit
pF
pF
pF
pF
pF
pF
OUT(DC)
Notes
= V
2
2
3
DDQ/