MT46H4M32LFB5-6 AT:K Micron Technology Inc, MT46H4M32LFB5-6 AT:K Datasheet
MT46H4M32LFB5-6 AT:K
Manufacturer Part Number
MT46H4M32LFB5-6 AT:K
Description
IC DDR SDRAM 128MBIT 90VFBGA
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Specifications of MT46H4M32LFB5-6 AT:K
Format - Memory
RAM
Memory Type
Mobile DDR SDRAM
Memory Size
128M (4Mx32)
Speed
166MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-40°C ~ 105°C
Package / Case
90-VFBGA
Organization
4Mx32
Density
128Mb
Address Bus
14b
Access Time (max)
6.5/5ns
Maximum Clock Rate
166MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
100mA
Pin Count
90
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Mobile LPDDR SDRAM AT Addendum
MT46H8M16LF – 2 Meg x 16 x 4 banks
MT46H4M32LF – 1 Meg x 32 x 4 banks
Features
• Vdd
• Bidirectional data strobe per byte of data (DQS)
• Internal, pipelined double data rate (DDR)
• Differential clock inputs (CK and CK#)
• Commands entered on each positive CK edge
• DQS edge-aligned with data for READs; center-
• Four internal banks for concurrent operation
• Data masks (DM) for masking write data—one mask
• Programmable burst lengths (BL): 2, 4, 8, or 16
• Concurrent auto precharge option is supported
• Auto refresh mode
• 1.8V LVCMOS-compatible inputs
• Deep power-down (DPD)
• Status read register (SRR)
• Selectable output drive strength (DS)
• Clock stop capability
Table 1:
Table 2:
PDF: 09005aef835b8f7c / Source: 09005aef835b8e70
128mb_ddr_mobile_sdram_t35m_AT_addendum.fm - Rev. D 01/09 EN
Architecture
Configuration
Refresh count
Row addressing
Column addressing
architecture; two data accesses per clock cycle
aligned with data for WRITEs
per byte
Speed Grade
/
Vddq = 1.70–1.95V
-54
-75
-5
-6
Key Timing Parameters (CL = 3)
Configuration Addressing
Products and specifications discussed herein are subject to change by Micron without notice.
Clock Rate (MHz)
200
185
166
133
Access Time
5ns
5ns
5ns
6ns
128Mb: x16, x32 Mobile LPDDR SDRAM AT Addendum
2 Meg x 16 x 4 banks
8 Meg x 16
4K A[11:0]
512 A[8:0]
4K
1
Notes: 1. Available only for x16 configuration.
Options
• Vdd/Vddq
• Configuration
• Row-size option
• Plastic “green” package
• Timing – cycle time
• Operating temperature range
• Design revision
– 1.8V/1.8V
– 8 Meg x 16 (2 Meg x 16 x 4 banks)
– 4 Meg x 32 (1 Meg x 32 x 4 banks)
– JEDEC-standard option
– 60-ball VFBGA (8mm x 9mm)
– 90-ball VFBGA (10mm x 13mm)
– 5ns @ CL = 3
– 5.4ns @ CL = 3
– 6ns @ CL = 3
– 7.5ns @ CL = 3
– Automotive (–40°C to +105°C)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2. Available only for x32 configuration.
3. Specified as ambient temperature (T
1 Meg x 32 x 4 banks
©2008 Micron Technology, Inc. All rights reserved.
4 Meg x 32
4K A[11:0]
256 A[7:0]
3
1
4K
2
Marking
Features
8M16
4M32
-54
-75
BF
LF
B5
AT
-5
-6
:K
H
A
).
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MT46H4M32LFB5-6 AT:K Summary of contents
Page 1
Mobile LPDDR SDRAM AT Addendum MT46H8M16LF – 2 Meg banks MT46H4M32LF – 1 Meg banks Features • Vdd Vddq = 1.70–1.95V / • Bidirectional data strobe per byte of data (DQS) • ...
Page 2
Figure 1: 128Mb Mobile DDR Part Numbering Micron Technology Product Family 46 = Mobile LPDDR SDRAM Operating Voltage H = 1.8V/1.8V Configuration 8 Meg Meg x 32 Addressing LF = Mobile standard addressing FBGA Part Marking Due ...
Page 3
Electrical Specifications The values listed in tables 3 and 4 reflect all specification relaxations necessary to support device operation in the automotive temperature range of –40°C to 105°C. Table 3: Idd Specifications and Conditions (x16/x32) Notes: 1–5 apply to all ...
Page 4
Revision History Rev ...