BCX41E6327XT Infineon Technologies, BCX41E6327XT Datasheet - Page 4

• Manufacturer Part Number: BCX41E6327XT
• Description: Transistors Bipolar - BJT NPN Silicn AF/SWITCH TRANSISTOR
• Manufacturer: Infineon Technologies

Specifications of BCX41E6327XT

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 125 V
• Collector- Emitter Voltage Vceo Max: 125 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 125 V
• Maximum Dc Collector Current: 1 A
• Dc Collector/base Gain Hfe Min: 25
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Continuous Collector Current: 800 mA
• Maximum Power Dissipation: 330 mW
• Part # Aliases: BCX41E6327HTSA1

Collector cutoff current I
V
Collector-base capacitance C
Emitter-base capacitance C
Ι
CB0
CBO
10
pF
nA
100
10
10
10
10
10
80
70
60
50
40
30
20
10
5
5
5
5
-1
0
= 80 V
0
4
3
2
1
0
0
BCX 41/BSS 64
CCB
5
50
CEB
10
max
CBO
100
eb
= ƒ (T
cb
= ƒ (V
V
typ
= ƒ (V
T
A
˚C
EHP00426
A
V
EB
)
CB
CB
)
(V
150
20
)
EB
4
Transition frequency f
V
Total power dissipation P
f
T
CE
MHz
mW
10
10
10
400
300
250
200
150
100
5
5
= 5 V
50
3
2
1
10
0
0
BCX 41/BSS 64
0
15
30
5
45
10
1
60
T
75
= ƒ (I
5
90 105 120
tot
10
= ƒ (T
C
2
)
2011-10-04
Ι
C
BCX41
EHP00423
S
mA
)
T
°C
S
10
150
3