PBSS4260PAN,115 NXP Semiconductors, PBSS4260PAN,115 Datasheet
PBSS4260PAN,115
Manufacturer Part Number
PBSS4260PAN,115
Description
Transistors Bipolar - BJT 60V 2A NPN/PNP lo VCEsat transistor
Manufacturer
NXP Semiconductors
Datasheet
1.PBSS4260PAN115.pdf
(17 pages)
Specifications of PBSS4260PAN,115
Rohs
yes
Configuration
Dual
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
60 V
Collector- Emitter Voltage Vceo Max
60 V
Emitter- Base Voltage Vebo
7 V
Collector-emitter Saturation Voltage
70 mV
Maximum Dc Collector Current
3 A
Gain Bandwidth Product Ft
140 MHz
Dc Collector/base Gain Hfe Min
290
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
DFN2020-6
Continuous Collector Current
2 A
Dc Current Gain Hfe Max
430
Maximum Power Dissipation
1450 mW
Minimum Operating Temperature
- 55 C
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1. General description
2. Features and benefits
3. Applications
4. Quick reference data
Table 1.
Symbol
Per transistor
V
I
I
Per transistor
R
C
CM
CEO
CEsat
Quick reference data
Parameter
collector-emitter
voltage
collector current
peak collector current
collector-emitter
saturation resistance
NPN/NPN low V
medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
NPN/PNP complement: PBSS4260PANP. PNP/PNP complement: PBSS5260PAP.
•
•
•
•
•
•
•
•
•
•
•
PBSS4260PAN
60 V, 2 A NPN/NPN low VCEsat (BISS) transistor
12 December 2012
Very low collector-emitter saturation voltage V
High collector current capability I
High collector current gain h
Reduced Printed-Circuit Board (PCB) requirements
High efficiency due to less heat generation
AEC-Q101 qualified
Load switch
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
Conditions
open base
single pulse; t
I
t
C
p
CEsat
≤ 300 µs; δ ≤ 0.02 ; T
= 1 A; I
Breakthrough In Small Signal (BISS) transistor in a leadless
B
= 100 mA; pulsed;
p
≤ 1 ms
FE
at high I
C
amb
and I
= 25 °C
C
CM
CEsat
Min
-
-
-
-
Product data sheet
Typ
-
-
-
-
Max
60
2
3
165
Unit
V
A
A
mΩ
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