PBSS4160PAN,115 NXP Semiconductors, PBSS4160PAN,115 Datasheet - Page 10

• Manufacturer Part Number: PBSS4160PAN,115
• Description: Transistors Bipolar - BJT 60V 1A NPN/PNP lo VCEsat transistor
• Manufacturer: NXP Semiconductors

Specifications of PBSS4160PAN,115

• Rohs: yes
• Configuration: Dual
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 60 V
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 7 V
• Collector-emitter Saturation Voltage: 90 mV
• Maximum Dc Collector Current: 1.5 A
• Gain Bandwidth Product Ft: 175 MHz
• Dc Collector/base Gain Hfe Min: 290
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: DFN2020-6
• Continuous Collector Current: 1 A
• Dc Current Gain Hfe Max: 430
• Maximum Power Dissipation: 1450 mW
• Minimum Operating Temperature: - 55 C

NXP Semiconductors
PBSS4160PAN
Product data sheet
Symbol
Fig. 10. DC current gain as a function of collector
V
V
t
t
t
t
t
t
f
C
d
r
on
s
f
off
T
BEsat
BEon
c
h
FE
800
600
400
200
0
10
V
(1) T
(2) T
(3) T
current; typical values
-1
CE
= 2 V
amb
amb
amb
Parameter
base-emitter saturation
voltage
base-emitter turn-on
voltage
delay time
rise time
turn-on time
storage time
fall time
turn-off time
transition frequency
collector capacitance
1
= 100 °C
= 25 °C
= −55 °C
(1)
(2)
(3)
10
10
2
10
Conditions
All information provided in this document is subject to legal disclaimers.
I
I
t
I
t
V
t
V
I
V
T
V
f = 1 MHz; T
C
C
p
C
p
p
Boff
006aad204
3
amb
CE
CC
CE
CB
I
≤ 300 µs; δ ≤ 0.02 ; T
≤ 300 µs; δ ≤ 0.02 ; T
≤ 300 µs; δ ≤ 0.02 ; T
C
= 500 mA; I
= 1 A; I
= 1 A; I
(mA)
= -25 mA; T
= 2 V; I
= 10 V; I
= 10 V; I
= 10 V; I
= 25 °C
10
4
B
B
= 50 mA; pulsed;
= 100 mA; pulsed;
C
14 January 2013
amb
C
E
C
= 0.5 A; pulsed;
B
= 0 A; i
= 50 mA; f = 100 MHz;
= 500 mA; I
= 50 mA; T
amb
= 25 °C
= 25 °C
Fig. 11. Collector current as a function of collector-
e
= 0 A;
amb
amb
amb
60 V, 1 A NPN/NPN low VCEsat (BISS) transistor
(A)
I
1.50
C
1.00
0.75
0.50
0.25
Bon
amb
= 25 °C
= 25 °C
= 25 °C
0
T
emitter voltage; typical values
= 25 mA;
0
= 25 °C
amb
I
B
= 15 mA
= 25 °C
1
13.5
2
12
Min
-
-
-
-
-
-
-
-
-
-
90
-
10.5
PBSS4160PAN
3
Typ
-
-
-
-
15
90
105
410
130
540
175
4
© NXP B.V. 2013. All rights reserved
4
006aad205
V
CE
Max
1
1.1
1.1
0.9
-
-
-
-
-
-
-
6
7.5
4.5
1.5
(V)
6
3
9
5
Unit
V
V
V
V
ns
ns
ns
ns
ns
ns
MHz
pF
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