IS42S16100E-7BLI-TR ISSI, Integrated Silicon Solution Inc, IS42S16100E-7BLI-TR Datasheet - Page 56

• Manufacturer Part Number: IS42S16100E-7BLI-TR
• Description: IC SDRAM 16MBIT 143MHZ 60BGA
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: SDRAMr

Specifications of IS42S16100E-7BLI-TR

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 16M (1M x 16)
• Speed: 143MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 60-BGA
• Organization: 1Mx16
• Density: 16Mb
• Address Bus: 12b
• Access Time (max): 6/5.5ns
• Maximum Clock Rate: 143MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: Mini BGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 150mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS42S16100E, IC42S16100E
Note 1: A8,A9 = Don’t Care.
56
Write Cycle / Precharge Termination
CAS latency = 2, burst length = 4
A0-A9
DQM
CKE
RAS
CAS
CLK
A10
A11
WE
DQ
CS
t
CKS
t
CS
T0
t
t
t
t
t
t
t
CS
t
t
CS
CS
AS
AS
AS
CKA
CK
CH
BANK 0
<
ROW
ROW
ACT 0
T1
t
CHI
>
t
t
t
CS
t
t
t
t
t
t
t
RCD
RAS
RC
AH
AH
CH
CH
CH
AH
T2
t
CL
t
DS
COLUMN m
<
NO PRE
WRIT 0
BANK 0
D
T3
IN
0m
>
(1)
t
DS
t
DH
T4
D
IN
0m+1
t
CH
t
DS
t
DH
T5
D
IN
0m+2
BANK 0 OR 1
t
t
DH
CS
Integrated Silicon Solution, Inc. — www.issi.com
<
BANK 0
PRE 0
T6
t
CH
>
t
RP
T7
<
BANK 0
BANK 1
ACT
ROW
ROW
T8
>
t
t
t
RAS
RCD
RC
T9
t
DS
t
CS
AUTO PRE
COLUMN n
<
NO PRE
BANK 1
BANK 0
<
T10
D
WRITA
WRIT
IN
Undefined
Don't Care
0n
>
(1)
>
t
DH
01/22/08
Rev. C