IS42S16400D-6TL ISSI, Integrated Silicon Solution Inc, IS42S16400D-6TL Datasheet - Page 12

• Manufacturer Part Number: IS42S16400D-6TL
• Description: IC SDRAM 64MBIT 166MHZ 54TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: SDRAMr

Specifications of IS42S16400D-6TL

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 64M (4M x 16)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-TSOP II
• Organization: 4Mx16
• Density: 64Mb
• Address Bus: 14b
• Access Time (max): 6/5ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 130mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS42S16400D
DC RECOMMENDED OPERATING CONDITIONS
12
ABSOLUTE MAXIMUM RATINGS
CAPACITANCE CHARACTERISTICS
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a
2. All voltages are referenced to GND.
3. V
4. V
V
Symbol
V
V
V
V
P
I
T
T
Symbol
C
C
CI/O
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
CS
Symbol
OPR
STG
DD
DD MAX
DDQ MAX
IN
OUT
D MAX
CLK
IH
IL
IN
(min) = GND - 2.0V with a pulse width < 3ns.
(max) = V
V
V
, V
IH
IL
DDQ
DDQ
Parameter
Input Capacitance: Address and Control
Input Capacitance: (CLK)
Data Input/Output Capacitance: I/O0-I/O15
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
+ 2.0V with a pulse width < 3ns.
Parameters
Maximum Supply Voltage
Maximum Supply Voltage for Output Buffer
Input Voltage
Output Voltage
Allowable Power Dissipation
Output Shorted Current
Operating Temperature
Storage Temperature
(4)
(3)
(1)
Min.
(1,2)
-0.3
3.0
2.0
(At T
Com.
A
Ind.
Typ.
= 0 to +25°C, V
3.3
—
—
(2)
(
At T
V
–1.0 to V
–1.0 to V
Integrated Silicon Solution, Inc. — www.issi.com
DD
Max.
+0.8
A
3.6
–1.0 to +4.6
–1.0 to +4.6
–65 to +150
–40 to +85
+ 0.3
= 0 to +70°C)
0 to +70
Rating
DD
50
1
DDQ
DDQ
= V
+ 0.5
+ 0.5
Unit
DDQ
V
V
V
= 3.3 ± 0.3V, f = 1 MHz)
Unit
mA
°C
°C
W
Typ.
V
V
V
V
—
—
—
Max.
3.8
3.5
6.5
Unit
pF
pF
pF
11/21/07
Rev. E