IS42S16100E-6TLI ISSI, Integrated Silicon Solution Inc, IS42S16100E-6TLI Datasheet - Page 8

• Manufacturer Part Number: IS42S16100E-6TLI
• Description: IC SDRAM 16MBIT 166MHZ 50TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: SDRAMr

Specifications of IS42S16100E-6TLI

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 16M (1M x 16)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 50-TSOPII
• Density: 16Mb
• Address Bus: 12b
• Access Time (max): 6/5.5ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 170mA
• Pin Count: 50
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

8
IS42S16100E, IS45S16100E
DC ELECTRICAL CHARACTERISTICS
Notes:
1. These are the values at the minimum cycle time. Since the currents are transient, these values decrease as the cycle time in-
2. Icc
Symbol Parameter
i
i
cc5
cc6
creases. Also note that a bypass capacitor of at least 0.01 µF should be inserted between V
to suppress power supply voltage noise (voltage drops) due to these transient currents.
1
and Icc
Auto-Refresh Current
Self-Refresh Current
4
depend on the output load. The maximum values for Icc
Test Condition
t
CKE ≤ 0.2V
rc
= t
rc
(
miN
(Recommended Operation Conditions unless otherwise noted.)
)
CAS latency = 3 Com.
CAS latency = 2 Com
1
and Icc
Integrated Silicon Solution, Inc. — www.issi.com
4
are obtained with the output open state.
Ind, A1
Ind, A1
Ind, A1
Ind, A1
Com.
Com
Com
Com
A2
A2
A2
A2
Speed
DD
—
-5
-6
-6
-6
-7
-7
-7
-5
-6
-6
-6
-7
-7
-7
and GND for each memory chip
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
120
100
110
120
100
120
100
110
120
100
80
90
80
90
2
05/18/2010
Unit
mA
mA
mA
Rev. E