IS61LV6416-10TLI ISSI, Integrated Silicon Solution Inc, IS61LV6416-10TLI Datasheet - Page 4

• Manufacturer Part Number: IS61LV6416-10TLI
• Description: IC SRAM 1MBIT 10NS 44TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61LV6416-10TLI

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 1M (64K x 16)
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 44-TSOP II
• Density: 1Mb
• Access Time (max): 10ns
• Sync/async: Asynchronous
• Architecture: Not Required
• Clock Freq (max): Not RequiredMHz
• Operating Supply Voltage (typ): 3.3V
• Address Bus: 16b
• Package Type: TSOP-II
• Operating Temp Range: -40C to 85C
• Number Of Ports: 1
• Supply Current: 130mA
• Operating Supply Voltage (min): 3.135V
• Operating Supply Voltage (max): 3.63V
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 44
• Word Size: 16b
• Number Of Words: 64K
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS61LV6416
IS61LV6416L
IS61LV6416
POWER SUPPLY CHARACTERISTICS
Note:
1. At f = f
2. Typical values are measured at V
CAPACITANCE
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
4
IS61LV6416L
POWER SUPPLY CHARACTERISTICS
Note:
1. At f = f
2. Typical values are measured at V
Symbol Parameter
I
I
I
Symbol Parameter
I
I
I
CC
SB
SB
CC
SB
SB
Symbol
C
C
1
2
1
2
IN
OUT
MAX
MAX
V
Supply Current
TTL Standby Current
(TTL Inputs)
CMOS Standby
Current (CMOS Inputs)
V
Supply Current
TTL Standby Current
(TTL Inputs)
CMOS Standby
Current (CMOS Inputs)
DD
DD
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
Dynamic Operating
Dynamic Operating V
Parameter
Input Capacitance
Input/Output Capacitance
(1)
Test Conditions
V
I
V
V
CE ≥ V
V
CE ≥ V
V
V
Test Conditions
I
V
V
CE ≥ V
V
CE ≥ V
V
V
OUT
OUT
DD
DD
IN
DD
IN
IN
DD
DD
DD
IN
DD
IN
IN
DD
= V
≥ V
≤ 0.2V, f = 0
= V
≥ V
≤ 0.2V, f = 0
=3.3V, T
= Max.,
= Max.,
= Max.,
= 0 mA, f = f
=3.3V, T
= Max.,
= 0 mA, f = f
= Max.,
= Max.,
IH
DD
IH
DD
IH
IH
DD
DD
or V
, f = 0
or V
, f = 0
– 0.2V,
– 0.2V, or
– 0.2V, or
– 0.2V,
IL
IL
A
A
=25
=25
MAX
MAX
o
o
C. Not 100% Tested.
(1)
C. Not 100% Tested.
(1)
Conditions
V
(Over Operating Range)
(Over Operating Range)
V
OUT
Com.
Com.
Com.
typ.
typ.
Com.
Com.
Com.
typ.
IN
typ.
Ind.
Ind.
Ind.
Ind.
Ind.
Ind.
= 0V
(2)
(2)
(2)
(2)
= 0V
Min. Max.
Min. Max.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
-8 ns
-8 ns
140
150
105
0.05
0.5
100
110
1.5
15
20
10
75
15
20
5
1
Max.
6
8
Min. Max.
Min. Max.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
-10 ns
-10 ns
Integrated Silicon Solution, Inc.
Unit
120
0.05
130
0.5
105
pF
pF
95
15
20
10
1.5
95
70
15
20
5
1
Min. Max.
—
—
—
—
—
—
—
—
-12 ns
ISSI
100
110
0.5
75
15
20
10
5
Unit
mA
mA
mA
11/22/05
Unit
mA
mA
mA
Rev. I
®