SI1539DL-T1 Vishay/Siliconix, SI1539DL-T1 Datasheet - Page 4

• Manufacturer Part Number: SI1539DL-T1
• Description: MOSFET 30 0.63/0.45
• Manufacturer: Vishay/Siliconix

Specifications of SI1539DL-T1

• Product Category: MOSFET
• Transistor Polarity: N and P-Channel
• Drain-source Breakdown Voltage: +/- 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.63 A, 0.45 A
• Resistance Drain-source Rds (on): 0.48 Ohms, 0.94 Ohms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363-6
• Fall Time: 8 ns at N Channel, 8 ns at P Channel
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 300 mW
• Rise Time: 8 ns at N Channel, 8 ns at P Channel
• Factory Pack Quantity: 3000
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 8 ns at N Channel, 5 ns at P Channel

Si1539DL
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
www.vishay.com
4
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
- 0.2
- 0.4
- 0.6
0.1
0.4
0.2
- 50
1
0
0.0
0.01
0.1
2
1
10
- 25
-4
Source-Drain Diode Forward Voltage
0.05
0.02
0.2
0.1
Duty Cycle = 0.5
0.2
V
SD
0
Single Pulse
-
Threshold Voltage
T
0.4
T
S
J
J
o
= 150 °C
25
- Temperature (°C)
u
c r
10
e
-3
t -
- o
0.6
50
D
a r
For more information please contact:
I
D
n i
Normalized Thermal Transient Impedance, Junction-to-Ambient
= 250 µA
75
V
0.8
l o
a t
g
100
e
T
10
J
(
) V
= 25 °C
-2
1.0
This document is subject to change without notice.
125
150
1.2
Square Wave Pulse Duration (s)
10
-1
[e-mail]
1.8
1.5
1.2
0.9
0.6
0.3
0.0
1
5
4
3
2
1
0
10
0
- 3
On-Resistance vs. Gate-to-Source Voltage
10
2
- 2
V
GS
1
Single Pulse Power
- Gate-to-Source Voltage (V)
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
0
10
P
DM
JM
- 1
4
- T
t
Time (s)
1
A
= P
t
1
2
DM
Z
6
thJA
S12-0800-Rev. E, 16-Apr-12
100
thJA
t
t
1
2
Document Number: 71250
(t)
10
www.vishay.com/doc?91000
I
= 400 °C/W
D
= 0.59 A
8
100
6
0
0
10
600