SI1539DL-T1 Vishay/Siliconix, SI1539DL-T1 Datasheet - Page 2

• Manufacturer Part Number: SI1539DL-T1
• Description: MOSFET 30 0.63/0.45
• Manufacturer: Vishay/Siliconix

Specifications of SI1539DL-T1

• Product Category: MOSFET
• Transistor Polarity: N and P-Channel
• Drain-source Breakdown Voltage: +/- 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.63 A, 0.45 A
• Resistance Drain-source Rds (on): 0.48 Ohms, 0.94 Ohms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363-6
• Fall Time: 8 ns at N Channel, 8 ns at P Channel
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 300 mW
• Rise Time: 8 ns at N Channel, 8 ns at P Channel
• Factory Pack Quantity: 3000
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 8 ns at N Channel, 5 ns at P Channel

Si1539DL
Vishay Siliconix
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
SPECIFICATIONS (T
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
b
a
a
a
J
= 25 °C, unless otherwise noted)
For more information please contact:
a
Symbol
R
V
I
t
t
I
I
DS(on)
V
GS(th)
D(on)
Q
Q
d(on)
d(off)
GSS
DSS
g
Q
t
t
t
SD
rr
fs
gs
gd
r
f
g
This document is subject to change without notice.
V
DS
I
V
D
V
V
I
DS
D
DS
 - 0.5 A, V
DS
= - 15 V, V
I
 0.5 A, V
F
I
F
= 15 V, V
= - 24 V, V
V
V
V
V
V
= - 0.23 A, dI/dt = 100 A/µs
V
= 24 V, V
V
V
V
V
V
I
= 0.23 A, dI/dt = 100 A/µs
GS
DS
V
V
V
GS
I
S
DS
V
DS
DS
S
DD
DS
DS
GS
DS
GS
DD
DS
DS
= - 0.23 A, V
= 0.23 A, V
= - 10 V, I
= - 15 V, I
= - 4.5 V, I
= V
- 5 V, V
= 0 V, V
= V
= - 24 V, V
= - 15 V, R
= 10 V, I
= 15 V, I
= 4.5 V, I
= 24 V, V
5 V, V
= 15 V, R
N-Channel
P-Channel
N-Channel
P-Channel
GS
GS
GEN
GEN
Test Conditions
GS
GS
GS
GS
, I
= - 10 V, I
, I
= 10 V, I
D
= 0 V, T
[e-mail]
GS
= 10 V, R
= - 10 V, R
D
= 0 V, T
GS
GS
D
D
D
D
= - 250 µA
D
D
= 250 µA
GS
GS
L
= 0.59 A
= - 0.42 A
= 0.59 A
= - 0.42 A
GS
GS
L
= ± 20 V
= 0.2 A
= - 0.2 A
= 10 V
= - 10 V
= 30 
= 30 
= 0 V
= 0 V
= 0 V
= 0 V
D
J
D
J
= 85 °C
= 0.59 A
g
= 85 °C
= - 0.42 A
g
= 6 
= 6 
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
- 1
- 1
1
1
S12-0800-Rev. E, 16-Apr-12
0.410
0.800
0.600
1.500
- 0.86
Document Number: 71250
Typ.
0.75
0.80
0.86
0.90
0.24
0.21
0.08
0.17
0.5
15
20
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5
4
8
8
8
5
7
7
± 100
± 100
0.480
0.940
0.700
1.700
Max.
- 2.6
- 1.2
2.6
1.2
1.4
1.4
- 1
- 5
10
10
15
15
15
10
15
15
30
40
1
5
Unit
nA
µA
nC
ns

V
A
S
V