SI1417EDH-T1 Vishay/Siliconix, SI1417EDH-T1 Datasheet - Page 5

• Manufacturer Part Number: SI1417EDH-T1
• Description: MOSFET 12V 3.3A 1.56W 85 mohms @ 4.5V
• Manufacturer: Vishay/Siliconix

Specifications of SI1417EDH-T1

• Product Category: MOSFET
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 2.7 A
• Resistance Drain-source Rds (on): 0.16 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363-6
• Fall Time: 1400 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1 W
• Rise Time: 1400 ns
• Factory Pack Quantity: 3000
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 4900 ns

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71412.
Document Number: 71412
S10-0935-Rev. B, 19-Apr-10
0.01
0.1
2
1
10
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
10
-3
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (s)
10
-2
10
-1
1
Vishay Siliconix
Si1417EDH
www.vishay.com
1
0
5