SI4804BDY-T1 Vishay/Siliconix, SI4804BDY-T1 Datasheet
SI4804BDY-T1
Manufacturer Part Number
SI4804BDY-T1
Description
MOSFET 30V 7.5A 1.1W
Manufacturer
Vishay/Siliconix
Datasheet
1.SI4804BDY-T1.pdf
(9 pages)
Specifications of SI4804BDY-T1
Product Category
MOSFET
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
5.7 A
Resistance Drain-source Rds (on)
22 mOhms
Configuration
Dual
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Fall Time
10 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
1.1 W
Rise Time
10 ns
Factory Pack Quantity
2500
Typical Turn-off Delay Time
19 ns
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4804BDY-T1
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI4804BDY-T1-E3
Manufacturer:
MURATA
Quantity:
20 000
Part Number:
SI4804BDY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI4804BDY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 72061
S10-0461-Rev. G, 22-Feb-10
Ordering Information:
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
DS
30
G
G
S
S
(V)
1
1
2
2
1
2
3
4
Top View
Si4804BDY -T1-E3
Si4804BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
SO-8
0.030 at V
0.022 at V
R
DS(on)
J
a
= 150 °C)
a
Dual N-Channel 30 V (D-S) MOSFET
8
7
6
5
GS
GS
(Ω)
= 4.5 V
= 10 V
(Lead (Pb)-free)
D
D
D
D
1
1
2
2
a
a
A
= 25 °C, unless otherwise noted
I
Steady State
Steady State
D
7.5
6.5
T
T
L = 0.1 mH
T
T
(A)
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• PWM Optimized
• 100 % R
• Compliant to RoHS Directive 2002/95/EC
• Symmetrical Buck-Boost DC/DC Converter
Symbol
Symbol
T
G
R
R
J
Definition
V
1
V
E
I
I
P
, T
DM
thJA
thJF
I
I
AS
GS
DS
AS
D
S
D
N-Channel MOSFET
stg
g
D
S
Tested
1
1
®
Power MOSFET
10 s
Typ.
7.5
6.0
1.7
2.0
1.3
52
93
35
- 55 to 150
Limits
± 20
30
30
10
5
Steady State
Max.
62.5
110
G
5.7
4.6
0.9
1.1
0.7
40
Vishay Siliconix
2
Si4804BDY
N-Channel MOSFET
www.vishay.com
D
S
2
2
°C/W
Unit
Unit
mJ
°C
W
V
A
1
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