NE34018-64 NEC/CEL, NE34018-64 Datasheet - Page 3

• Manufacturer Part Number: NE34018-64
• Description: MOSFET L-S Band Lo No Amp
• Manufacturer: NEC/CEL

Specifications of NE34018-64

• Drain-source Breakdown Voltage: 4 V
• Gate-source Breakdown Voltage: - 3 V
• Continuous Drain Current: 80 mA
• Mounting Style: SMD/SMT
• Package / Case: SOT-343
• Forward Transconductance Gfs (max / Min): 0.03 S
• Power Dissipation: 150 mW

TYPICAL CHARACTERISTICS (T
Remark The graphs indicate nominal characteristics.
250
200
150
100
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
50
80
60
40
20
–2.0
0
0
MINIMUM NOISE FIGURE,
0
ASSOCIATED GAIN vs. FREQUENCY
DRAIN CURRENT vs.
TOTAL POWER DISSIPATION
GATE TO SOURCE VOLTAGE
vs. AMBIENT TEMPERATURE
5
Gate to Source Voltage V
50
Ambient Temperature T
Frequency f (GHz)
10
Mounted on Glass Epoxy PCB
(1.08 cm
100
G
a
–1.0
15
2
NF
150
× 1.0 mm (t) )
min
20
A
GS
(˚C)
V
I
A
D
V
200
DS
(V)
= 10 mA
DS
= +25°C)
25
= 2 V
= 2 V
Data Sheet PG10584EJ01V0S
250
30
0
25
20
15
10
5
0
100
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
MINIMUM NOISE FIGURE,
80
60
40
20
ASSOCIATED GAIN vs. DRAIN CURRENT
0
0
f = 20 GHz
V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
DS
= 2 V
5
Drain to Source Voltage V
Drain Current I
10
1.0
15
NF
G
a
min
D
(mA)
20
DS
V
NE350184C
(V)
GS
25
–0.2 V
–0.4 V
–0.6 V
= 0 V
2.0
30
20
18
16
14
12
10
8
6
4
2
0
3