NE34018-64 NEC/CEL, NE34018-64 Datasheet

no-image

NE34018-64

Manufacturer Part Number
NE34018-64
Description
MOSFET L-S Band Lo No Amp
Manufacturer
NEC/CEL
Datasheet

Specifications of NE34018-64

Drain-source Breakdown Voltage
4 V
Gate-source Breakdown Voltage
- 3 V
Continuous Drain Current
80 mA
Mounting Style
SMD/SMT
Package / Case
SOT-343
Forward Transconductance Gfs (max / Min)
0.03 S
Power Dissipation
150 mW
Document No. PG10584EJ01V0DS (1st edition)
Date Published November 2005 CP(K)
FEATURES
• Super low noise figure and high associated gain
• Micro-X ceramic (84C) package
APPLICATIONS
• 20 GHz-band DBS LNB
• Other K-band communication systems
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
NE350184C-T1
NE350184C-T1A
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Remark To order evaluation samples, contact your nearby sales office.
Note Mounted on 1.08 cm
Part Number
NF = 0.7 dB TYP., G
Part number for sample order: NE350184C
Parameter
NE350184C-T1-A
NE350184C-T1A-A
Order Number
a
K-BAND SUPER LOW NOISE AMPLIFIER
= 13.5 dB TYP. @ f = 20 GHz
2
× 1.0 mm (t) glass epoxy PCB
HETERO JUNCTION FIELD EFFECT TRANSISTOR
Symbol
P
tot
84C (Pb-Free)
V
V
T
T
I
I
DS
GS
D
G
stg
ch
Note
Package
A
N-CHANNEL HJ-FET
= +25°C)
−65 to +150
1 kpcs/reel
5 kpcs/reel
Ratings
Quantity
+150
I
165
−3
80
DSS
4
Marking
A
Unit
mW
mA
µ
°C
°C
V
V
A
• 12 mm wide embossed taping
• Pin 4 (Gate) faces the perforation side
of the tape
NE350184C
Supplying Form

Related parts for NE34018-64

NE34018-64 Summary of contents

Page 1

HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER FEATURES • Super low noise figure and high associated gain NF = 0.7 dB TYP 13.5 dB TYP GHz a • Micro-X ceramic (84C) ...

Page 2

RECOMMENDED OPERATING CONDITIONS (T Parameter Symbol Drain to Source Voltage V Drain Current I Input Power P ELECTRICAL CHARACTERISTICS (T Parameter Symbol Gate to Source Leak Current I GSO Saturated Drain Current I DSS Gate to Source Cutoff Voltage V ...

Page 3

TYPICAL CHARACTERISTICS (T A TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 250 Mounted on Glass Epoxy PCB 2 × 1.0 mm (t) ) (1.08 cm 200 150 100 100 150 Ambient Temperature T (˚C) A DRAIN CURRENT vs. ...

Page 4

S-PARAMETERS S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form (S2P) that enables direct import to a microwave circuit simulator without keyboard input. Click here to download S-parameters. [RF and Microwave] → [Device Parameters] ...

Page 5

RF MEASURING LAYOUT PATTERN (REFERENCE ONLY) (UNIT: mm) Reference Plane (Calibration Plane) φ 0.3 TH RT/duroid 5880/ROGERS t = 0.254 mm εr = 2.20 tan delta = 0.0009 @10 GHz 2.07 1.78 1.0 0.5 2.11 mm/R. Ω = ...

Page 6

PACKAGE DIMENSIONS 84C (UNIT: mm) 6 1.78±0 0.5 TYP 1.0±0.2 (All leads) PIN CONNECTIONS 1. Source 2. Drain 3. Source 4. Gate Data Sheet PG10584EJ01V0S NE350184C ...

Page 7

RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Infrared Reflow Peak temperature (package surface temperature) Time at peak ...

Page 8

Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) ...

Related keywords