SI3909DV-T1 Vishay/Siliconix, SI3909DV-T1 Datasheet - Page 5

• Manufacturer Part Number: SI3909DV-T1
• Description: MOSFET 20V 1.8A
• Manufacturer: Vishay/Siliconix

Specifications of SI3909DV-T1

• Product Category: MOSFET
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 1.8 A
• Resistance Drain-source Rds (on): 0.2 Ohms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSOP-6
• Fall Time: 34 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.15 W
• Rise Time: 34 ns
• Factory Pack Quantity: 3000
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 19 ns

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70968.
Document Number: 70968
S09-2276-Rev. B, 02-Nov-09
0.01
0.1
2
1
10
-4
0.02
0.05
Duty Cycle = 0.5
0.2
0.1
Single Pulse
10
-3
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (s)
10
-2
10
-1
1
Vishay Siliconix
Si3909DV
www.vishay.com
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