SI3853DV-T1 Vishay/Siliconix, SI3853DV-T1 Datasheet - Page 5

• Manufacturer Part Number: SI3853DV-T1
• Description: MOSFET 20V 1.8A 1.15W
• Manufacturer: Vishay/Siliconix

Specifications of SI3853DV-T1

• Product Category: MOSFET
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 1.6 A
• Resistance Drain-source Rds (on): 0.2 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSOP-6
• Fall Time: 34 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 830 mW
• Rise Time: 34 ns
• Factory Pack Quantity: 3000
• Typical Turn-off Delay Time: 19 ns

MOSFET TYPICAL CHARACTERISTICS T
SCHOTTKY TYPICAL CHARACTERISTICS T
Document Number: 70979
S09-2276-Rev. B, 02-Nov-09
0.0001
0.001
0.01
0.01
0.1
20
10
0.1
1
2
1
10
0
Reverse Current vs. Junction Temperature
-4
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
25
Single Pulse
20 V
T
J
- Junction Temperature (°C)
50
10
75
-3
10 V
Normalized Thermal Transient Impedance, Junction-to-Foot
150
120
100
90
60
30
0
0
125
4
Square Wave Pulse Duration (s)
10
A
150
-2
= 25 °C, unless otherwise noted
V
KA
A
Capacitance
- Reverse Voltage (V)
= 25 °C, unless otherwise noted
8
12
10
0.1
-1
5
1
16
0
T
J
0.2
20
= 150 °C
V
Forward Voltage Drop
F
- Forward Voltage Drop (V)
0.4
1
T
J
Vishay Siliconix
= 25 °C
0.6
Si3853DV
www.vishay.com
0.8
1
0
1.0
5