VN2460N3-P013 Supertex, VN2460N3-P013 Datasheet - Page 4

• Manufacturer Part Number: VN2460N3-P013
• Description: MOSFET 600V 20Ohm
• Manufacturer: Supertex

Specifications of VN2460N3-P013

• Product Category: MOSFET
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.2 A
• Resistance Drain-source Rds (on): 20 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-92
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1 W
• Factory Pack Quantity: 2000
• Typical Turn-off Delay Time: 25 ns

Typical Performance Curves
1.2
1.1
1.0
0.9
0.8
300
225
150
0.5
0.4
0.3
0.2
0.1
75
0
0
-50
0
0
C RSS
V DS = 25V
Capacitance vs. Drain Source Voltage
BV
DSS
2
Transfer Characteristics
10
0
Variation with Temperature
C OSS
T A = 25°C
C ISS
V GS (Volts)
V DS (volts)
4
T j (
T A = -55°C
20
50
°
C)
●
6
1235 Bordeaux Drive, Sunnyvale, CA 94089
f = 1MHz
T A = 125°C
100
30
(cont.)
8
150
10
40
4
1.6
1.4
1.2
1.0
0.8
0.6
0.4
10
50
40
30
20
10
8
6
4
2
0
0
-50
0
0
●
V GS(TH) and R DS(ON) w/ Temperature
I D = 0.5A
Tel: [phone]
Gate Drive Dynamic Characteristics
R DS(on) @ 10V, 0.1A
-25
On Resistance vs. Drain Current
V GS(th) @ 2mA
0.2
1.0
0
Q (nanocoulombs)
G
I D (Amperes)
VGS = 4.5V
25
0.4
2.0
T j (
50
V DS =10V
°
C)
●
0.6
3.0
www.supertex.com
75
V DS =40V
VGS = 10V
100
0.8
4.0
125
150
1.0
5.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
VN2460