IS61LV256AL-10TLI-TR ISSI, Integrated Silicon Solution Inc, IS61LV256AL-10TLI-TR Datasheet - Page 4

• Manufacturer Part Number: IS61LV256AL-10TLI-TR
• Description: IC SRAM 256KBIT 10NS 28TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61LV256AL-10TLI-TR

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 256K (32K x 8)
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 28-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS61LV256AL
POWER SUPPLY CHARACTERISTICS
Notes:
1. At f = f
2. Typical values are measured at V
CAPACITANCE
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
4
Sym.
I
I
I
I
cc
cc
sb
sb
Symbol
c
c
1
2
1
2
In
out
max
Parameter
V
Supply Current
V
Supply Current
TTL Standby Current
(TTL Inputs)
CMOS Standby
Current (CMOS Inputs)
dd
dd
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
Operating
Dynamic Operating
Parameter
Input Capacitance
Output Capacitance
a
(1,2)
= 25°c, f = 1 MHz, V
dd
= 3.3V, T
Test Conditions
V
I
V
I
V
V
CE ≥ V
V
CE ≥ V
V
V
out
out
dd
dd
dd
In
dd
In
In
dd
= V
≥ V
≤ 0.2V, f = 0
= Max., CE = V
= Max., CE = V
= Max.,
= Max.,
= 0 mA, f = 1 MHz
= 0 mA, f = f
= 3.3V.
Ih
Ih
dd
dd
a
, f = 0
or V
– 0.2V,
– 0.2V, or
= 25
Il
(1)
o
C and not 100% tested.
Conditions
max
V
(Over Operating Range)
V
out
Il
Il
In
= 0V
= 0V
Com.
Com.
Com.
Com.
typ.
typ.
Ind.
Ind.
Ind.
Ind.
(2)
(2)
Integrated Silicon Solution, Inc. — 1-800-379-4774
Min.
—
—
—
—
—
—
—
—
-10 ns
20
Max.
2
6
5
Max.
20
25
30
35
40
50
1
1
Unit
pF
pF
Unit
mA
mA
mA
µA
07/29/09
Rev. C