SI3911DV-T1 Vishay/Siliconix, SI3911DV-T1 Datasheet - Page 4

• Manufacturer Part Number: SI3911DV-T1
• Description: MOSFET 20V 2.2A
• Manufacturer: Vishay/Siliconix

Specifications of SI3911DV-T1

• Product Category: MOSFET
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 2.2 A
• Resistance Drain-source Rds (on): 0.145 Ohms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSOP-6
• Fall Time: 29 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 830 mW
• Rise Time: 29 ns
• Factory Pack Quantity: 3000
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 24 ns

Si3911DV
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71380.
www.vishay.com
4
- 0.1
- 0.2
0.4
0.3
0.2
0.1
0.0
- 50
0.01
0.01
0.1
0.1
2
1
2
1
10
10
- 25
-4
-4
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0
I
D
Threshold Voltage
= 250 µA
T
Single Pulse
J
25
- Temperature (°C)
10
-3
Single Pulse
50
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
Normalized Thermal Transient Impedance, Junction-to-Foot
100
10
-2
125
Square Wave Pulse Duration (s)
150
Square Wave Pulse Duration (s)
10
-2
10
-1
8
6
4
2
0
10
0.01
1
-1
Single Pulse Power (Junction-to-Ambient)
0.1
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
Notes:
P
DM
JM
- T
Time (s)
A
t
1
1
= P
S09-2276-Rev. C, 02-Nov-09
t
2
DM
Document Number: 71380
1
Z
thJA
thJA
100
(t)
t
t
1
2
= 130 °C/W
10
600
10
30